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GRAPHENE APPLICATION IN ELECTRONICS AND TECHNOLOGY OF PREPARATION
Zahradníček, Radim ; Sofer,, Zdeněk (referee) ; Macák, Jan (referee) ; Hubálek, Jaromír (advisor)
This thesis focuses on the study of graphene application in electronics and technology of preparation. In addition to the basic properties of graphene, the theoretical part of the work also describes the methods of its preparation, transmission, characterization and possibilities of application in electronics. The experimental part is divided into three chapters. The first chapter deals with the production of graphene by deposition from the gaseous phase, its transmission and application in the field of solar cells. The Poly(methyl methacrylate) polymer was first used for transfer of graphene, which was later replaced by Rosin due to less contamination of graphene at the end of the transmission process. The second chapter deals with the preparation of quantum dots by exfoliation in the liquid phase from graphite and its application in voltammetry. Voltammetry was utilized in this work to detect hydrogen peroxide using a gold electrode modified by quantum dots from graphene and other dichalcogens (MoS2, MoSe2, WS2, WSe2). In the last chapter, the influence of the substrate and the deposition conditions of graphene is studied by means of a plasma-reinforced phase-out of gas to growth, while the prepared graphene was characterized by imaging and spectroscopic methods. The entire experimental growth of graphene was managed and evaluated using a planned experiment.
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Preparation of graphene quantum dots and study of their properties
Zdražil, Lukáš ; Mikula, Milan (referee) ; Zmeškal, Oldřich (advisor)
Current methods for preparing graphene quantum dots (GQDs) rely on oxidation and reducing agents or require energy-intensive and technologically demanding preconditions. Applying microwave expansion and liquid phase exfoliation (LPE) in a sample of graphite powder enabled us to prepare GQDs that exhibit strong luminescence in the blue region of the visible spectrum. The proposed technique for synthesizing GQDs is energetically undemanding and does not necessitate additional chemical components.
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Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor) ; Čuba, Václav (referee) ; Pejchal, Jan (referee)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
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Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
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GRAPHENE APPLICATION IN ELECTRONICS AND TECHNOLOGY OF PREPARATION
Zahradníček, Radim ; Sofer,, Zdeněk (referee) ; Macák, Jan (referee) ; Hubálek, Jaromír (advisor)
This thesis focuses on the study of graphene application in electronics and technology of preparation. In addition to the basic properties of graphene, the theoretical part of the work also describes the methods of its preparation, transmission, characterization and possibilities of application in electronics. The experimental part is divided into three chapters. The first chapter deals with the production of graphene by deposition from the gaseous phase, its transmission and application in the field of solar cells. The Poly(methyl methacrylate) polymer was first used for transfer of graphene, which was later replaced by Rosin due to less contamination of graphene at the end of the transmission process. The second chapter deals with the preparation of quantum dots by exfoliation in the liquid phase from graphite and its application in voltammetry. Voltammetry was utilized in this work to detect hydrogen peroxide using a gold electrode modified by quantum dots from graphene and other dichalcogens (MoS2, MoSe2, WS2, WSe2). In the last chapter, the influence of the substrate and the deposition conditions of graphene is studied by means of a plasma-reinforced phase-out of gas to growth, while the prepared graphene was characterized by imaging and spectroscopic methods. The entire experimental growth of graphene was managed and evaluated using a planned experiment.
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Hydrogen Peroxide Senzing By Dichalkogenide Quantum Dots Prepared By Lpe
Zahradníček, Radim
Signalling molecules such as hydrogen peroxide (H2O2) play crucial role in cellular metabolism. Under pathological conditions, the cell is unable to control enzymatic conversion H2O2 into water and oxygen. This fail in cell metabolism could lead to damage of cell. Thus produced H2O2 is presented at a nanomolar scale and currently there is a lack of suitable electrochemical sensors for its sensitive detection. Modification of screen printed electrodes (SPE) with 2D-nanomaterial quantum dots prepared by Liquid Phase Exfoliation (LPE). MoS2, MoSe2, WS2 and WSe2 compounds were used for this purpose. Such modified electrodes were characterized and optimized for hydrogen peroxide detection.
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Preparation of graphene quantum dots and study of their properties
Zdražil, Lukáš ; Mikula, Milan (referee) ; Zmeškal, Oldřich (advisor)
Current methods for preparing graphene quantum dots (GQDs) rely on oxidation and reducing agents or require energy-intensive and technologically demanding preconditions. Applying microwave expansion and liquid phase exfoliation (LPE) in a sample of graphite powder enabled us to prepare GQDs that exhibit strong luminescence in the blue region of the visible spectrum. The proposed technique for synthesizing GQDs is energetically undemanding and does not necessitate additional chemical components.
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Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor) ; Čuba, Václav (referee) ; Pejchal, Jan (referee)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
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Oxide scintillator detectors
Lučeničová, Zuzana ; Kučera, Miroslav (advisor) ; Bryknar, Zdeněk (referee) ; Mihóková, Eva (referee)
The presented thesis focused on the study of a new material concept of Ce3+ doped multicom- ponent aluminum garnets (GdLu)3(GaAl)5O12. High purity single crystalline epitaxial films were grown by the method of liquid phase epitaxy from the BaO-B2O3-BaF2 flux with spe- cial emphasis on the elimination of the potential impurities coming from the flux. Combined experimental study of photoelectron yield (under alpha excitation), decay kinetics of fast and delayed recombination in the milisecond time range (under e-beam excitation) and photo-, cathodo- and radio-luminescence spectroscopies were used to characterize the studied mater- ial. The single-step nonradiative energy transfer from the donor Gd3+ to an acceptor Ce3+ was observed in the low Gd, Ce doped LuAG films and established as long-range dipole - dipole interaction. Special attention was devoted to the positive effect of combined Gd and Ga substitution on the extensive suppression of shallow traps, which are responsible for the slow component in the scintillation response. The best obtained scintillation characteristics of the studied epitaxial films were comparable with the top performance bulk crystals. 1
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Preparation and optical properties of scintillation oxide layers
Hanuš, Martin ; Kučera, Miroslav (advisor)
In this work we studied properties of garnet scintillator layers (RxLu3-xAl5O12, RxY3-xAl5O12) doped by rare earth ions (Ce, Pr, Tb), orthosilicates (Y2SiO5; R = Ce, Tb) and influence of Sc codoping on Pr3+ and Tb3+ emissions. The Zr codoping on Ce3+ emission in orthosilicates was also studied. The samples were prepared by liquid phase epitaxy. The studied materials show high quantum efficiency and good chemical and mechanical stability. They represent ideal materials for 2D imaging devices. We studied optical absorption, excitation and emission spectra and scintillation properties (radiolunescence and photoelectron yield). The aim was to determine the properties of grown layers and their comparison to Czochralski grown single crystals. We looked for the impact of melt and growth conditions on measured layer properties. We also tried to determine optimal amount of dopants in layer. We used PbO - B2O3 and BaO - BaF2 - B2O3 fluxes. Using these fluxes, we succeeded in growing layers with less intrinsic defects in crystal lattice in comparison to single crystals. In grown layers of thickness from 1 to 30 µm higher dopant concentration was achieved than in single crystals.
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